| 摘要 |
PURPOSE:To uniformize the thickness of the film formed on a substrate and to fix the sputtering rate by providing the magnetic field generating means separated into >=2 blocks, and furnishing an auxiliary magnetic field generating means in each block to control the shape of an electric discharge. CONSTITUTION:A couple of targets T1 and T2 are set in a vacuum chamber 10, and permanent magnets 151 and 161 as the magnetic field generating means and electromagnets 152, 162 and 153, 163 as the auxiliary magnetic field generating means are arranged respectively behind the targets T1 and T2 in opposition to each other. The S pole of the magnet 151 is confronted with the N pole of the magnet 161 with respect to the targets T1 and T2. The magnetic poles of the electromagnets 152-163 are arranged in the same way so that the unlike poles are confronted with each other. Either the N or S poles of the electromagnets 152-163 can be generated on the surfaces of the targets T1 and T2 by changing the electric current direction, the intensity of the generated magnetic field is adjusted by the current value, and the magnetic field distribution of the targets T1 and T2 can be adjusted. By this method, the utilization efficiency of the targets T1 and T2 is improved. In addition, a uniform thin film can be formed on a substrate 40 over a large area.
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