| 摘要 |
PURPOSE:To obtain the title semiconductor single crystal without quality deterioration by contamination in high production efficiency, by inserting an inner tube, which is closed with a wall halfway, into the reaction tube of which one end is opened and air-tight-sealing mechanically the tube-doubling part extended outside the furnace to keep the sealed part cool. CONSTITUTION:A boat containing As 6 and seed crystal 8 are placed on one end of a clear quartz tube 3 and an inner tube 4 is inserted into the tube 3 and the edge ends of tubes 3 and 4 are fixed with connector 9. The system is vacuumed from one end of the tube 3 to effect vacuum-seal cutting. Then, the tube 3 is set in a duplex heater furnace so that the connector comes outside the furnace to conduct the single crystal growth. The low-temperature furnace 2 is controlled to keep the temperature at 610 deg.C so that As vapor is always present in the wall part 11 in the inner tube 4. In the meantime, the inside of the boat 5 is kept near 1,200 deg.C by the high- temperature furnace 1 to conduct the single crystal growth of GaAs. The process according to the present invention makes the melt-connection and cutting (after reaction) of the quartz reaction tubes unnecessary, resulting in shortened process for making tubes and increased operability.
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