| 摘要 |
PURPOSE:To facilitate increasing the number of external connection electrodes and reducing the size of a chip by a method wherein the external connection electrodes composed of narrow rectangular electrode including shaped electrodes are formed on the element region and in the circumferential part of a semiconductor substrate with a reinforced passivation film in between. CONSTITUTION:Narrow rectangular external connection electrodes 1 including shaped electrodes are formed on a semiconductor substrate 4 after the surface is levelled. As the external connection electrode 1 is formed into the narrow rectangle, degree of freedom for connecting to a lower electrode under a reinforced passivation film is improved. Even if the width of a measurement electrode 17 is reduced in accordance with the increase of the number of the external connection electrodes and the electrode 17 becomes improper for measurement, the electrodes can be provided on an element region. The element region 3 in which an element is formed is formed over nearly the whole surface of the semiconductor substrate 4. After polyimide resin is applied to the element, the passivation film 2 is formed by sputtering of SiO2 or the like to improve the strength. Further, aluminum external connection electrodes 1a with a thickness of, for instance, 1 mum is formed on the element region 3 with the reinforced passivation film 2 in between by sputtering or the like. |
