| 摘要 |
PURPOSE:To improve the manufacturing efficiency of a large scale fine device by a method wherein the common patterns of a small number of large area patterns is transcripted in a batch and the characteristic patterns of a large number types of small area patterns are directly lithographed and those patterns are superposed, synthesized and developed. CONSTITUTION:Semiconductor device design data 1 are divided into common circuit part data 2 necessary for batch transferring by deep-UV rays and fine circuit part data 3 necessary for direct lithography by electron beam exposure. Batch transfer masks are formed in accordance with the common circuit part data 2. Pattern data are produced in accordance with the fine circuit part data 3. Then negative type resist which is sensitive to both an electron beam and deep-UV rays is applied to the surface of a semiconductor wafer 4. The transfer mask is set and the common circuit part pattern is transferred to the negative type resist in a batch by the application of the UV rays. Successively, in accordance with the pattern data, the pattern is directly lithographed on the negative type resist by the electron beam exposure. Then the negative resist is developed. |
