| 摘要 |
PURPOSE:To separate a light-emitting diode device surely and easily by a method wherein, after a P-N junction part has been formed by growing a semiconductor layer on a substrate by using a liquid phase epitaxial growth method or the like, the light-emitting diode device is separated and formed by a two- stage etching process so that a dynamic scanning operation can be executed. CONSTITUTION:For example, Si-GaAs is used for a substrate 13. A P-GaAlAs layer 14 and an N-GaAlAs layer 15 are formed in succession on the substrate 13 by a liquid phase epitaxial growth method or the like. Then, an etching operation is executed down to the substrate 13; an island of a P-N junction composed of GaAlAs is formed. After that, only one part of the N-GaAlAs layer 15 as an uppermost layer is etched; lastly, an electrode 16 composed of Ni-Au-Ge is formed on the N-GaAlAs layer and an electrode 17 composed of Au-Zn is formed on the P-GaAlAs layer 14, both by evaporation or the like. By this setup, it is possible to separate a light-emitting diode part into individual devices. |
