| 发明名称 |
Semi-conductor component with contact hole |
| 摘要 |
In power MOSFETs the source zone (5) and the channel zone (4) must be contacted by a common contact (15). If the contact material is aluminum and if the channel zone (4) is n-conductive (p-channel MOSFET), a surface region (8) of the channel zone (4) is additionally n-doped through an opening (6) in the source zone (5) thereabove with a dose of >/=5x1014 atoms cm-2. The aluminum contact (15) contacts the channel zone (4) at this region (8) thereby forming a purely ohmic contact to the channel zone.
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| 申请公布号 |
US4785344(A) |
申请公布日期 |
1988.11.15 |
| 申请号 |
US19850692757 |
申请日期 |
1985.01.18 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
FRANZ, GUENTHER |
| 分类号 |
H01L21/28;H01L21/285;H01L21/336;H01L29/10;H01L29/41;H01L29/43;H01L29/78;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/28 |
| 代理机构 |
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