发明名称 COMPOUND HAVING HEXAGONAL LAYER STRUCTURE EXPRESSED BY INFEZN8O11 AND PRODUCTION THEREOF
摘要 PURPOSE:To obtain a novel compound useful as magnetic, semiconductor and catalyst materials, by blending respective metals or oxides of In, Fe and Zn and heating the resultant blend in a specific atmosphere. CONSTITUTION:Metallic indium, indium oxide or a compound decomposable the indium oxide by heating is blended with metallic iron, iron oxide or a compound decomposable into the iron oxide by heating and metallic zinc, zinc oxide or a compound decomposable into the zinc oxide by heating at 1:1:8 atomic ratio of In:Fe:Zn. The resultant blend is then heated at >=700 deg.C temperature in the air, an oxidizing or reducing atmosphere in which the In and Fe are not respectively reduced from the trivalent ionic state and Zn is not reduced from the bivalent ionic state to afford the aimed compound having a hexagonal layer structure expressed by InFeZn8O11.
申请公布号 JPS63277522(A) 申请公布日期 1988.11.15
申请号 JP19870111408 申请日期 1987.05.07
申请人 NATL INST FOR RES IN INORG MATER 发明人 KIMIZUKA NOBORU;MORI NAOHIKO
分类号 C01G49/00;B01J23/80;H01F1/34;H01L21/34 主分类号 C01G49/00
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