| 摘要 |
PURPOSE:To realize an oscillation at a single wavelength even during a high- speed modulation and to obtain a high output by a method wherein the light which has leaked from an active layer formed inside a stripe groove is guided inside a waveguide layer and one wavelength is selected by the reflection of a diffraction grating formed on the surface of a substrate. CONSTITUTION:A diffraction grating 20 is formed on a p-InP substrate 11. Then, a p-InGaAsP wavelength layer 21, a first n-InP current-blocking layer and a second n-InP current-blocking layer 12, 13 are grown in succession on the substrate 11. Then, a stripe groove 22 along a <001> direction is formed, by using an etching solution such as hydro-chloric acid, on a wafer whose first crystal growth has been completed. Then, a first p-InP clad layer 14, an InGaAsP active layer 15, a second n-InP clad layer 16 and an n-InGaAsP contact layer 17 are grown in succession on the current-blocking layer 13. During this process, a thickness of the first p-InP clad layer 14 is grown to be thin so that the light conducted through the InGaAsP active layer can be conducted simultaneously through the p-InGaAsP waveguide layer 21. Lastly, an n-side electrode 19 is formed on the side of the n-InGaAsP contact layer 17 and a p-side electrode 18 is formed on the p-InP substrate 11; a chip is separated. |
