| 摘要 |
PURPOSE:To stably produce a thin compd. or alloy film with high controllability when a thin film is formed on a substrate by the decomposition of a gaseous starting material, by sputtering a target so as to incorporate the component of the target into the thin film. CONSTITUTION:Gases for ionization such as hydrogen and nitrogen are introduced into an ionization chamber 13 from the gas inlet 10 and a gaseous starting material such as ferrocene [(C5H5)2Fe] is introduced into a reaction chamber 5 from the reactive gas inlet 11 with a carrier gas. Plasma is generated by electron cyclotron resonance and the gaseous starting material is decomposed by the plasma to form a thin film of iron carbide or the like on a substrate 1. At this time, a target 3 of Co or the like is sputtered by impressing voltage from a power source 4 for sputtering to form a thin film of iron carbide contg. Co. The resulting thin film has improved characteristics such as increased coercive force. By this method, various elements can be incorporated into a thin film and a thin compd. or alloy film can easily be formed.
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