发明名称 READ METHOD FOR MEMORY CONTENT OF SUPERCONDUCTIVE MEMORY LOOP
摘要 PURPOSE:To make the operational margin of a read instruction current larger by designating the specific threshold characteristic of a DC skid type sense gate used to read a superconductive memory loop to a specified value. CONSTITUTION:When a memory content is '1' and a circulating current iL flows through the superconductive memory loop 11, this memory content is read out by the DC skid type sense gate 12 magnetically connected with the loop 11 corresponding to a read instruction current IR and a read selection current iS. In such a case an induction current IL generated by the current iL, the current IR flows in such a direction as negating the current iL generated by a current iR flowing through the loop 11 corresponding to the current IR, flow to a gate whose threshold Ith is in a relation Ith>IR-IL, and the gate 12 goes to a zero voltage state, and thus the memory content '1' is read out. Meanwhile, when the memory content of '0' of the loop 11 where the current iL does not flow through, the gate 12 where the threshold is Ith<IR goes to potentialized state, and the content is read out. Hence a condition of Ith<IR<Ith+IL is satisfied and the operational margin value of the current IR does not go to a low fixed value, therefore, the margin becomes larger for the operation with a read instruction current.
申请公布号 JPS63276788(A) 申请公布日期 1988.11.15
申请号 JP19870102787 申请日期 1987.04.24
申请人 AGENCY OF IND SCIENCE & TECHNOL 发明人 NAKAGAWA HIROSHI;TAKADA SUSUMU;KUROSAWA ITARU
分类号 H01L39/22;G11C11/44 主分类号 H01L39/22
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