| 摘要 |
PURPOSE:To facilitate fine processing for a semiconductor device and to eliminate adverse effects of an impurity of a resist by a method wherein a conductive film on an insulating film and a semiconductor substrate are connected by using another conductive film formed by a selective CVD method. CONSTITUTION:After an insulating film 2 has been formed on a p-type semiconductor substrate 1, a polycrystalline silicon film 4 is formed. Then, after an oxide film 5 has been formed, a side wall 6a composed of a nitride film and an oxide film 7a are formed on a side wall of the silicon film 4. The wall 7a and the oxide film 5 are etched, and an oxide film 5a is formed. Then, after the wall 6a has been removed, the oxide film 5a is etched, and one part of the substrate 1 and a side wall 4a of the silicon film 4 are exposed. Tungsten 9 is formed by using a selective CVD method in a part where silicon has been exposed, and the silicon film 4 is connected to the substrate 1. Because a conductive film on the insulating film 2 and the semiconductor substrate 1 are connected by another conductive film formed by a CVD method in this maner, this method is suitable for fine processing and eliminates adverse effects of the impurity of a resist.
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