| 摘要 |
PURPOSE:To form a semiconductor light-emitting device having an InAs/GaAs quantum well structure as a light-emitting layer by a method wherein the quantum well structure composed of InAs and GaAs is formed on a semiinsulating GaAs substrate and a GaAs layer is formed on a face dug from the substrate and on a side face of the quantum well structure so that the former GaAs part is used as an n-type conductive layer and that the latter GaAs part is used as a p-type conductive layer. CONSTITUTION:A stripe mask having a width of a light-emitting layer is formed on a 100 plane and along a [011] direction of a semiinsulating GaAs substrate; this assembly is etched by a reaction-limited etching solution; a 111A plane is formed. Then, the GaAs substrate 13 which has been etched inside a molecular beam epitaxial device is irradiated simultaneously with a Ga molecular beam, an Si molecular beam and an As4 molecular beam. During this process, n-type GaAs 14 is grown on the 100 plane of the substrate 13 and p-type GaAs 15 is grown on the 111A plane. That is to say, it is possible to form different types of conductive layers simultaneously. After that, while the As4 molecular beam is being irradiated, Ga and Si are switched to In. During this process, InAs is grown only on the 100 plane of the substrate. This kind of process is repeated as many times as required. |
