ALUMINUM ALLOY TARGET MATERIAL

摘要

PURPOSE:To prevent the occurrence of defects in a vapor-deposited film due to heat treatment by using a target material having a compsn. obtd. by adding a specified amt. of an alloy of B and a group IVA metal as an essential component to Al. CONSTITUTION:This Al alloy target material for vapor deposition by sputtering has a compsn. contg. >=90wt.% Al and <=10wt.% first alloy consisting of 2mol. B and 1-2mol. group IVA metal such as Ti or a compsn. contg. >=85wt.% Al, <=10wt.% first alloy and <=5wt.% second alloy not contg. B or the group IVA metal. A vapor-deposited film formed with the target material does not cause abnormal crystal growth even when heat treated. The film exhibits superior chemical characteristics during etching. The target material may be used to form the wiring of a semiconductor integrated circuit.