| 摘要 |
PURPOSE:To form an element protected from invasion of implanted ions and maintaining excellent electric characteristics by a method wherein the element formed in a compound semiconductor substrate and an ion implanted region are separated from each other by a compound semiconductor region into which ions are not implanted. CONSTITUTION:A resistance layer 2 with a width of a 2 mum is formed in a GaAs substrate 1 by ion implantation. Then a resist film is applied to the substrate 1 exposed and developed to form a resist pattern 3 which covers the surface of the resistance layer 2 and is wider than the resistance layer 2 by about 1 mum outward. Then, from the above of the substrate, B<+> ions are implanted to form an insulated ion implanted region 4 with a little distance from the resistance layer 2. Then the resist pattern 3 is removed. Although the distance between the resistance layer 2 and the insulated ion implanted region 4 is reduced to some extent by various treatments in a semiconductor device manufacturing process, the insulated ion implanted region 4 never invades the resistance layer 2.
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