| 发明名称 |
Integrated lateral PNP transistor and current limiting resistor |
| 摘要 |
A PNP transistor and a current limiting resistor are formed in a single active region of an integrated circuit device. The resistor is arranged to limit current flow between the emitter and collector regions of the transistor upon breakdown of the PN junctions due to momentary high voltage.
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| 申请公布号 |
US4785339(A) |
申请公布日期 |
1988.11.15 |
| 申请号 |
US19860915985 |
申请日期 |
1986.10.03 |
| 申请人 |
GE SOLID STATE PATENTS, INC. |
发明人 |
DE SHAZO, JR., THOMAS R. |
| 分类号 |
H01L29/73;(IPC1-7):H01L29/72;H01L29/06 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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