| 摘要 |
PURPOSE:To improve the yield by forming a plurality of sets of photosensor elements which are formed of photodiodes and blocking diodes, and selectively using the photosensor elements having no film defects by providing terminals at both ends of the element. CONSTITUTION:Photosensor elements 4' which are formed of photodiodes 2' and blocking diodes 3' which have substantially equal electric characteristics as photodiodes 2 and blocking diodes 3 are connected in series with a photosensor element 4 which is composed of the photodiodes 2 and the blocking diodes 3, terminals 9, 10, 11 for shortcircuiting either one set of the photosensor elements 4, 4' are formed to compose a photosensor element corresponding to 1-bit picture element. When a defect for causing the film defect of an amorphous silicon takes place, for example, at the element 4, the elements 9, 10 are shortcircuited by using a shortcircuiting wire 12 to disable the element 4, thereby forming a photsensor element 4' of good quality. |
