SILICON CARBIDE SEMICONDUCTOR ELEMENT

摘要

PURPOSE:To provide a substantially improved silicon carbide semiconductor element, by forming the element from a single-crystal silicon carbide film of good quality having internal stress being decreased. CONSTITUTION:An aluminum mask 16 is formed selectively on the crystal growing surface of a single-crystal silicon substrate 15 used as a supporting substrate having a crystal face (111) on which crystals are to be grown. The surface of the substrate 15 not covered with the mask 16 is etched by the RIE process to form recesses. The mask is removed to provide a substrate 14 for growing single crystals of silicon carbide. After silicon carbide semiconductor films 17 and 18 are formed by the CVD process. Al for providing source and drain electrodes 119 and 20 and Au for providing a gate Schottky electrode 21 are deposited by vacuum vapor deposition. In this manner, a plurality of field effect transistors of Schottky junction type can be juxtaposed on the flat bottoms of the recesses as well as on the flat tops of the projected sections.