| 摘要 |
PURPOSE:To contrive for miniaturization, areal enlargement, and higher integration for various types of semiconductor devices by a method wherein the electrode wiring material is an Mo-Ta alloy film wherein the two metals are so mixed as to be quite low in resistivity and excellent in workability and stability. CONSTITUTION:An Mo-Ta alloy film wherein Ta accounts for 30-85 atom % and the combination of Mo and Ta not less than 95 atom %, is deposited on a glass substrate 1. A PEP process follows for the patterning of the Mo-Ta alloy film into a gate electrode 17. An Si3N4 film 31 is then formed as a gate insulating film on the electrode 17. Undoped a-Si films 33 and 133, N<+>-type a-Si film 35, and Mo film 37 are formed, in that order. These three films are to be retained, after etching, in a thin film transistor region and at the crossing of an address wiring 11 and data line 13, the data line 13 remaining to be built. After this, by using an ITO film, a display electrode 21 is built. Finally, by Al vaporization and patterning, a data line 13, and a source and drain electrodes 18 and 19 to be connected to the data line 13, are formed. |
