| 摘要 |
PURPOSE:To obtain a novel semiconductor element, by utilizing negative differential resistance based on resonance tunnel effect caused by a quantum well. CONSTITUTION:A semiconductor element according to the present invention has an energy band structure which consists of quadruplex hetero junction of indium arsenic 2 or ternary mixed crystals principally composed of indium arsenic and gallium antimony 1 and comprises two barrier layers 4 of indium arsenic or ternary mixed crystals principally composed of indium arsenic, one gallium antimony quantum well layer 3 or two gallium antimony barrier layers and one quantum well layer of indium arsenic or ternary mixed crystals principally composed of indium arsenic. In the energy band structure, electrons in the ternary mixed crystal barrier layer 4 have a quantization level higher than the peak of a valence band of the gallium antimony on the opposite sides thereof, or holes in the gallium antimony barrier layer have a quantization level lower than the bottom of a conduction electron band of the indium arsenic or the ternary mixed crystals principally composed of indium arsenic located on the opposites sides thereof.
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