| 摘要 |
PURPOSE:To deposit thin films in high film thickness by a method wherein material gasses to deposit thin films and an etching gas to etch the deposited thin films are alternately or simultaneously fed to the surface of semiconductor wafers. CONSTITUTION:After the temperature of wafers 5 is stabilized, a valve 9a is opened to feed material gasses 1 together with a carrier gas 2a to the surface of wafers from a water-cooled gas dispersing heads 10 simultaneously exhausting the gasses to deposit thin films on the wafers 5. As soon as the deposited film thickness becomes uneven, the valve 9a is closed to open another valve 9b for feeding an etching gas 3 together with another carrier gas 2b to the surface of semiconductor wafers 6 so that the deposited thin films may be etched a little bit. When one cycle each of this depositing and etching processes can not allow the film attain the required film thickness, additional cycles shall be repeated. Through these procedures, the thin films in high film thickness can be deposited.
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