发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To provide source and drain electrodes ohmic to low contact resistance, by forming the source and drain electrodes of an ohmic metal deposited within grooves having a depth reaching at least the surface of an undoped GaAs layer. CONSTITUTION:An N<+> type Al0.3Ga0.7As layer 3 and an N<+> type GaAs layer 4 are deposited sequentially on a semi-insulating GaAs substrate 1. Apertures are formed in regions 5 where source and drain electrodes are to be formed. The N<+> type GaAs layer 4 and the N<+> type Al0.3Ga0.7As layer 3 are etched, and AuGe is deposited in the etched section by vacuum vapor deposition for providing an AuGe-Ni layer 6. The AuGe-Ni layer 6 is removed except the regions 5 where source and drain electrodes are to be formed. The structure is then heat treated within the atmosphere of hydrogen to form an alloy layer 8, whereby ohmic source and drain electrodes 10 and 11 are formed. After an aperture is provided in the N<+> type GaAs layer 4, a gate electrode 12 is formed therein.
申请公布号 JPS63276275(A) 申请公布日期 1988.11.14
申请号 JP19870111909 申请日期 1987.05.08
申请人 NEC CORP 发明人 ISHIUCHI HIROAKI
分类号 H01L29/812;H01L21/338;H01L29/417;H01L29/778 主分类号 H01L29/812
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