| 摘要 |
PURPOSE:To grow high purity crystal containing As by a method wherein the crystal containing arsenic is brought into contact with the raw gas containing As, and the impurities contained in the raw gas, especially sulfur is taken into the crystal. CONSTITUTION:The raw gas cotaining arsenic is introduced from introducing pipes 14, 15, 16 and 17, and it is decomposed by heat. At that time, an arsenic- cotaining III-V compound semiconductor 26 is taken into a quartz boat 25 and arranged in the path of the raw gas containing arsenic located on the part which will be dissolved by heat. Pipes 18 and 20, with which the group V gas such as arsine, phosphine and the like, and pipes 19 and 21 through which the doping gas such as H2S and the like will be made to flow are connected to the upper chamber 8 and the lower chamber 9 respectively. Consequently, high purity crystal containing As can be grown.
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