发明名称 MEASURING METHOD OF MOS TYPE TRANSISTOR
摘要 PURPOSE:To measure the capacitance between remaining two terminals and internal resistance, by electrically connecting one terminal of a MOS transistor to be measured to the chassis of an LCR meter at a ground potential, and connecting the remaining two terminals to the LCR meter. CONSTITUTION:An LCR meter 1 incorporates, e.g., an oscillator (OSC) 2, which oscillates and outputs 1MHz, an ammeter 3 and a voltmeter 4. The drain of a MOS type transistor 5 to be measured is connected to the OSC 2 and the voltmeter 4. The source is connected to the common connecting point of the ammeter 3 and the voltmeter 4. Whereas, the gate is connected to a chassis 6 of the LCR meter 1, which is at a ground potential. Thus, the capacitance between the remaining two terminals other than the gate, which is connected to the chassis 6, (i.e., between the drain and the source) and internal resistance can be measured. Therefore, the characteristics of the MOS transistor can be measured only by the LCR meter.
申请公布号 JPS63275965(A) 申请公布日期 1988.11.14
申请号 JP19870111103 申请日期 1987.05.07
申请人 FUJITSU LTD 发明人 KANBAYASHI HIROSHI;YAMANAKA KAZUO;SUEYOSHI SATOSHI
分类号 G01R31/26;G01R27/02;H01L21/66;H01L29/78 主分类号 G01R31/26
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