发明名称 BIPOLAR TRANSISTOR AND MANUFACTURE THEREOF
摘要 PURPOSE:To prevent a contact resistance from increasing owing to the decrease of area and improve the yield by a method wherein an emitter electrode covering the whole surface of an emitter region, a base electrode sandwiched by the emitter region, and an insulating region provided in a collector region just under the base electrode are constructed. CONSTITUTION:An emitter electrode 82 formed self-alignedly on the whole surface of emitter regions which are formed into an inverted trapezoid through the anisotropic etching, a base electrode 93 formed self-alignedly on a region sandwiched with the emitter region 22, an insulating region 42 formed in a collector region 24 just under the base electrode 93, and a collector electrode 84 built self-alignedly are provided. Thereby, a contact resistance based on an emitter electrode is rendered structurally minimum and moreover the resistance in each region can be rendered smaller as other electrodes are also formed self-alignedly, and capacitance can be decreased because an insulating region is provided in a collector region unneeded just under a base electrode region and also yield can be improved through self-alignment.
申请公布号 JPS63275171(A) 申请公布日期 1988.11.11
申请号 JP19870111039 申请日期 1987.05.07
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OTA TOSHIMICHI;EDA KAZUO;INADA MASAKI;YANAGIHARA MANABU
分类号 H01L29/73;H01L21/306;H01L21/331;H01L29/20;H01L29/72;H01L29/737 主分类号 H01L29/73
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