| 摘要 |
PURPOSE:To prevent a contact resistance from increasing owing to the decrease of area and improve yield by a method wherein an emitter electrode covering the whole surface of an emitter region shaped into inverted trapezoid in section traversing between the emitter electrode and a base electrode, and the base electrode sandwiched with the emitter region are provided. CONSTITUTION:An emitter electrode 82 formed self-alignedly on the whole surface of emitter regions 12 which are formed into an inverted trapezoid through an anisotropic etching, a base electrode 83 formed self-alignedly in the region which is sandwiched between the emitter regions, and a collector electrode formed self-alignedly are provided. Therefore, as compared with a bipolar transistor having the same area of an emitter region, the emitter electrode 82 has the same area as the emitter region 12. Thereby, a contact resistance due to an emitter electrode is rendered structurally minimum and resistance concerning each region can be rendered smaller through self-alignment, and yield is improved by self-alignment.
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