| 摘要 |
PURPOSE:To impressively reduce defect fault density of a photodetector part and improve yield by forming a transistor material or gate electrode material to the photodetector part and using such transistor material or gate electrode material as the etching stopper for removing interlayer insulating film at the photodetector part. CONSTITUTION:A polysilicon 2 is formed on a quartz substrate 1, a necessary region is removed by the photoetching method and a gate oxide film 3 is formed by the high temperature oxidizing method. Next, a polysilicon doping phosphorus is formed and a gate electrode 4 is them formed by the photoetching method. In this case, the polysilicon 4 is left also to a photodetector part. Next, the interlayer insulating film 5 is formed with SiO2 to the entire part of substrate by the CVD method. Thereafter the interlayer insulating film and polysilicon of the photodetector part are removed by the photoetching method. In this case, the polysilicon at the base material functions as the etching stopper of the interlayer insulating film above the polysilicon. |
