| 摘要 |
PURPOSE:To form a uniform thin film on a material to be treated by positioning the circular hole bored through a selection plate on a desired target, and then rotating the shutter having the same shape as the coaxial with the selection plate and having a circular hole. CONSTITUTION:In a vacuum vessel 3, targets 1a, etc., are sputtered by plasma, and the sputtered target material is deposited to form a thin film on the surface of a material 4 to be treated opposed to the target. In such a sputtering device, the shutter 2 for blocking the sputtered material is provided, and the circular hole 9 for passing the sputtered material is bored through the shutter 2. In addition, the selection plate 8 having the same shape as the shutter 2 and free to rotate is coaxially provided on the target 1a side. The circular hole 9 of the selection plate 8 is rotated and moved to a position corresponding to the desired target 1a, the shutter is then rotated, and sputtering is carried out. By this method, when both circular holes 9 and 9 are aligned with each other, the sputtered material is deposited on the material 4, and a uniform thin film is formed.
|
