| 摘要 |
PURPOSE:To form a region in a complete nitrogen gas-containing atmosphere on a lead frame by a method wherein the title manufacturing device is provided with a plurality of holes for blowing off nitrogen gas through the peripheral part of the island of the lead frame placed on the upper part of the device and grooves for holding the nitrogen gas-containing atmosphere on the periphery of the island. CONSTITUTION:A lead frame 2 is conveyed by a conveying part 4 in a direction A shown by an arrow and an island 3 of the frame 2 is fixed on an island fixing part 5 of a heater block 1. An atmosphere containing nitrogen gas blown off through holes 6 is held by grooves 7 on the periphery of the fixing part 5 and a semiconductor chip 9 to come being carried by an adhesive function part 8 is adhered to the island 3. By cutting the grooves 7, the vortex 12 of a nitrogen air current is generated by nitrogen currents 10 from the holes 6 and accompanying air currents 11 of the nitrogen currents 10 on the periphery of the island 3 on the fixing part 5 and the growth of the vortex 12 is assisted by the grooves 7. Thereby, the hour for forming a gold-silicon eutectic alloy is shortened and also, the alloy can be completely formed.
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