| 摘要 |
PURPOSE:To form a smooth interlayer-insulating film, and prevent the short- circuit of a upper wiring layer caused by void, by making a CVD chamber and a dry etching chamber neighbor with each other, delivering a wafer on which a film is formed in the CVD chamber to the dry etching chamber, and etching back the wafer up to a half-way. CONSTITUTION:After an interlayer-insulating film 103 is deposited on a wafer wherein a lower wiring 102 is formed on a substrate 101, the wafer is delivered to a dry etching chamber 2. At the time of etch back by reactive ion 105 in this chamber, a film growing on the shoulder part of the lower wiring 102 is etched more rapidly than the flat part by reactive ion accelerated by an intense electric field at the soulder part, and becomes a fairly smooth interlayer- insulating film whose corner is eliminated. Then the etching gas is exhausted, and the wafer is again sent to the CVD chamber to grow the interlayer- insulating film. After the film is formed, the wafer is again sent to the dry etching chamber to be etched back, and a smooth interlayer-insulating film having no void can be obtained. Thereby, the short-circuit of an upper wiring can be prevented.
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