| 摘要 |
PURPOSE:To intensify the bond between an AlN ceramics substrate and metal Ni by a simple stage by interposing a Hf nitride between said substrate and the metal Ni. CONSTITUTION:A coating layer of the nitride essentially consisting of Hf, for example, HfN powder paste having 98% purity is formed to about 10mu thickness on the AlN ceramics substrate contg., for example, CaO.2Al2O3 (0.2wt.% as Ca) essentially consisting of AlN. Metallic foil of Ni having 100mu thickness is placed thereon and while 1kg/cm<2> pressure is held exerted to the joint surface, the substrate is subjected to a heating treatment for 1hr in gaseous N2 kept at 1,200 deg.C. The HfN layer is thereby brought into reaction with both the AlN ceramics and the metal Ni, by which both are securely joined. The resultant high heat conductivity ceramics substrate is applicable to various parts, etc. of automobiles, gas turbines and lasers in addition to the substrate to be packaged with semiconductors.
|
