发明名称 QUARTZ CRUCIBLE FOR PRODUCTION OF SEMICONDUCTOR SINGLE CRYSTAL
摘要 PURPOSE:To make the titled crucible with high purity and to secure both the use at a high temp. and large size formation by fitting the inner body of the crucible formed of synthetic quartz into the outer body of the crucible formed of quartz glass and welding the inner body to the outer body of the crucible in a plurality of spots. CONSTITUTION:The outer body 11 of a crucible is formed with quartz glass e.g. translucent quartz glass manufactured by melting natural quartz with an arc melting method and the inner body 12 of the crucible is formed with synthetic quartz manufactured by pyrolytically decomposing silicon compd. Then the inner body 12 of the crucible is fitted into the outer body 11 and the top end part of the outer body 11 and the top end part of the inner body 12 are mutually welded in several spots. Thereby the wall thickness of the crucible 12 can be made constant and the usage of synthetic quartz used as its constituent is reduced.
申请公布号 JPS63274686(A) 申请公布日期 1988.11.11
申请号 JP19870107573 申请日期 1987.04.30
申请人 TOSHIBA CERAMICS CO LTD 发明人 HISADA TAKASHI;KUMAKURA MAKOTO
分类号 C30B15/10;C03B20/00 主分类号 C30B15/10
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