| 摘要 |
PURPOSE:To eliminate interference of protective layer and attain uniform sensi tivity by covering a photoelectric conversion region with a single or a plurality of protective layers having almost equal refractive indices and setting thickness of protective layer to several tens or more times of the wavelength of incident light. CONSTITUTION:A photoelectric conversion region 2 is formed by the pn junction on a semiconductor substrate 1. An oxide film 3 consisting of a gate oxide film and intermediate insulating layer is formed by the semiconductor process on the semiconductor substrate 1. When a nitride film 5 on the photoelectric conversion region 2 is removed by the etching, etc., the light shielding layer 4 is protected by invasion of temperature in such a manner as the nitride film 4 covers to a certain degree the light shielding layer 4. After the semiconductor image sensor elements thus formed are loaded on the substrate, resin molding is carried out as the protective layer. This resin 6 should well transmit the incident light and have the refractive index near that of oxide film 3. Thickness of resin should be several tens or more times of the wavelength of incident light.
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