| 摘要 |
PURPOSE:To improve deposition velocity of diamond and to simplify prepn. of raw material gas by using a gaseous mixture contg. H2 and >=a specified vol.% CO as gaseous raw material. CONSTITUTION:Diamond is deposited on a substrate by allowing a gaseous mixture contg. H2 and >=1vol.% CO after exciting the gaseous mixture to contact with the substrate. If the content of CO in the gaseous mixture is <1vol.%, diamond is not formed or the deposition velocity is extremely small even if it is formed. A means for obtg. said gaseous raw material contg. C in the excited state is, for example, plasma CVD process, sputtering process, ionized vapor deposition process, ion beam vapor deposition process, hot filament process, chemical transfer process, etc.
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