SEMICONDUCTOR RADIATION DETECTOR

摘要

PURPOSE:To obtain a semiconductor radiation detector, which presents high detection efficiency without change in sensitivity with time, by providing a tellurium oxide layer between a metal electrode layer and a cadmium telluride crystal to prevent formation of a barrier layer between the cadmium telluride crystal and the metal electrode layer so that good ohmic contact may be formed. CONSTITUTION:A Te layer is deposited on one face of a high-resistance CdTe crystal 1 with a resistivity of 10<8>-10<10>OMEGAcm by vacuum evaporation and thermally oxided to form a TeOX layer 2. An Au electrode 3 is formed on the TeOX layer 2 by vacuum evaporation. A TeOX layer 2 and an Au electrode 3 are also laminated on the other face of the CdTe crystal 1 by a similar method, and thus a full depletion layer type CdTe radiation detector is constituted. Since there is no barrier layer on the junction interface between the Au electrode 3 and the TeOX layer 2 and no space charge is accumulated, an extremely stable semiconductor radiation detector is realized which operates for a long time without the change in detection sensitivity.