| 摘要 |
PURPOSE:To generate uniform plasma effectively as well as to make it possible to form a uniform semiconductor thin film on a substrate on which said thin film is coated by a method wherein a shielding plate is arranged in such a manner that a high frequency wave application electrode and its circumference are surrounded by an air gap, and the atmosphere of reaction gas is controlled in such a manner that it will be diluted. CONSTITUTION:The title electrode body structure is composed of a high frequency wave application electrode 1, on which high frequency waves are applied and a high frequency current runs, and a shielding plate 2 which is arranged surrounding said high frequency wave application electrode while an air gap is being maintained. This shielding plate is equipped with a gas introducing means to be used to introduce purge gas into the air gap 6 positively, a connecting connector is attached thereto, and the electrode body structure is constituted in such a manner that the purge gas can be introduced from a purge gas flow meter 20. The purge gas is introduced, the reaction gas in the air gap is diluted, or substantially a state wherein no reaction gas is allowed to remain in the air gap is more desirable. The desirable flow rate of gas is 5-500 cc/min. or thereabout. As a result, the homogeneous film of large area can be deposited at a high speed in a highly efficient manner.
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