发明名称 PHOTO-CVD EQUIPMENT
摘要 PURPOSE:To enable the formation of a minute, hard and uniform thin film, by putting-ON an ultraviolet ray source lamp by applying a high frequency power source, and making the lamp radiate a continuous light whose luminous intensity does not become zero. CONSTITUTION:From a high frequency power source 7, high frequency power is applied to an ultraviolet ray source lamp 1, both ends of which are provided with electrodes 3 for applying high frequency power, through a lead wire 4 and a coaxial cable 5. At this time, in order to prevent the discharge from being unstable because of a load resistance component and the like of the lamp 1, a matching apparatus 6 is put in the next stage of the high frequency power source 7 to get matching. When a frequency of the high frequency power source is set at 13.56 MHz, the fluctuation of luminous intensity of the ultraviolet ray at the time of radiation of the ultraviolet ray lamp is hardly observed, and almost continuous radiation can be obtained. Thereby, at the time of the photochemical reaction for thin film formation, the ultraviolet ray is continuously irradiated, so that the quality of a formed film becomes uniform and compact.
申请公布号 JPS63275111(A) 申请公布日期 1988.11.11
申请号 JP19870111949 申请日期 1987.05.07
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HAYASHI SHIGENORI;ITO KENJI
分类号 H01L21/205;H01L21/263 主分类号 H01L21/205
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