| 摘要 |
PURPOSE:To contrive the reduction of a manufacturing cost by making the interval between elements on one surface wider and by enabling the formation of a film by using a mask by forming an amorphous silicon photovoltaic element by dividing on both surfaces of a substrate by using the insulating transparent substrate buried with a connecting conductor plate by such as a metal foil. CONSTITUTION:A transparent electrode 2 and a metal electrode 4 are formed on both the top and the bottom surfaces of an insulating transparent substrate 1 by using a mask for evaporation by such as electron beam evaporation. If the amorphous silicon films on both the surfaces of the substrate 1 are simultaneously formed in the sequence of a p-type layer, an i-layer and an n-type layer, for the photovoltaic element on the top surface of the substrate, the transparent electrode 2 is made a (+) pole and the metal electrode 4 is made a (-) pole and for the photovoltaic element on the bottom surface of the substrate, the metal electrode 4 is made a (+) pole and the transparent electrode 2 is made a (-) pole. Accordingly, each element is connected in series by alternately connecting the transparent electrodes 2 and the metal electrodes 4 on both the top and the bottom surfaces to a connecting conductor plate 7. In this way, a thin film photovoltaic device wherein power is generated by light 5 which enters from a bottom surface side is completed. |
