发明名称 MANUFACTURE OF HERMETICALLY SEALED TYPE SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent the sealing defect caused by an insufficient flow and the oozing-out of glass sealing material, by adhering the glass sealing material on both ceramic cap and ceramic base, and forming notches on one of the sealing materials. CONSTITUTION:On the upper periphery of a ceramic base 2, glass sealing material is adhered without a break, and a semiconductor element 1 is fixed on an island with silver paste and the like. Electrodes of the semiconductor element 1 are subjected to bonding with metal thin wires 4, and electrically connected to each lead 3. On the otherhand, as to a ceramic cap 6, its sticking surface to the ceramic base 2 is coated with glass sealing material 7, and each of four notches 9 is formed on the nearly centeral part of each side. This sealing material 7 is also previously spread before the semiconductor element 1 is fixed on the ceramic base 2. These ceramic base 2 and ceramic cap 6 are heated at 400-500 deg.C while a pressure is applied, and the glass sealing material is melted to form a sealing part. Thereby, the sealing defect caused by poor flow and the oozing-out of glass sealing material can be prevented.</p>
申请公布号 JPS63275147(A) 申请公布日期 1988.11.11
申请号 JP19870111822 申请日期 1987.05.07
申请人 NEC CORP 发明人 UJIIE MASATO
分类号 H01L23/02;H01L23/10 主分类号 H01L23/02
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