| 摘要 |
PURPOSE:To obtain an La2CuO4 single crystal by the flux method by melting a mixture of La2O3 or/and La2(CO3)3 with CuO in a specified proportion by mole, depositing crystallites by cooling slowly the melt, then allowing the crystal to grow further. CONSTITUTION:An La2CuO4 single crystal is grown by this invention basing on a preped. phase equilibrium diagram of an La2O3-CuO system. Concretely, 28.9-7.1mol.% La2O3 or/and La2(CO3)3 and 71.1-92.9mol.% CuO, which is a compositional ratio of a liquidus AB is mixed and melted at 1,040-1,330 deg.C. When the obtd. melt is cooled slowly, the compsn. of the melt is shifted toward CuO side along the liquidus AB to cause deposition of La2CuO4 as solid phase. An aimed La2CuO4 single crystal is obtd. by cooling and growing the deposited crystal further. |
