Method of growing indium phosphide epitaxially by material transfer between adjacent surfaces in the fabrication of semiconductor lasers

摘要

The method achieves the object of readily obtaining epitaxial growth of indium phosphide on semiconductor bodies from the gas phase. A semiconductor body (25) having a surface (26) intended for epitaxial growth and an indium phosphide source substrate (23) are arranged one above the other in a reaction chamber (21) containing a protective-gas atmosphere, and the indium phosphide source substrate (23) is heated. In addition to the arrangement being heated on one side, the semiconductor substrate body (25) is at a lower temperature than the indium phosphide source substrate (23). The indium phosphide source substrate (23) is heated so that indium phosphide evaporates from it, and the temperature of the semiconductor body (25) becomes so high that the evaporated indium phosphide deposits on its surface and grows epitaxially in doing so. The method can be used in the fabrication of semiconductor lasers.