| 摘要 |
PURPOSE:To avoid the short circuit due to swelling solder at the time of chip bonding by a method wherein a P-N junction exposed to a side surface of no light emission, or a P-N junction exposed to a side surface not participated in light emission is covered with an insulation film, when a light emitting element is fixed on a supporting body via the solder. CONSTITUTION:A thin P type GaAlAs layer 12 is grown on the lower surface of a P type GaAlAs substrate 11, and an N type layer 13 and an N<+> type layer 14 are laminated and formed thereunder. Next, two grooves penetrating into the layer 12 are bored through the layers 14 and 13, the insulation film 15 is adhered from the lower surface end of the substrate 11 on to the layer 14 and into the grooves, and thus the P-N junction on the side surface is covered. Thereafter, the film 15 held between the two grooves is removed, thus exposing the layer 14 at this part, a cathode electrode 2 is mounted on the lower surface including it, which is fixed on a sub mount 4 by means of the solder 3. Besides, a P<+> type GaAlAs layer 16 is grown on the surface of the substrate 11, an anode electrode 8 is provided thereon, a light lead-out window 5 is bored at the center, and the tip 7 of an optical fiber 6 is made to face there. |
