| 摘要 |
PURPOSE:To obtain a distributed reflection type laser having low optical coupling loss and high reliability by cladding (AlxGa1-x)yIn1-yP(xnot equal to 1) by (AlpGa1-p)qIn1-qP(pnot equal to 1) in a current injector, forming a predetermined diffraction grating on a clad layer on an active layer in a distributed reflector, and superposing a p-type Al0.5In0.5P layer on the top. CONSTITUTION:A double hetero structure and a cap layer 7 are superposed on a GaAs substrate 8 by an MOVPE method, only a current injector 14 is covered with a dielectric mask 13, a clad layer 3 on an active layer 1 of a distributed reflector 15 is etched to its interior, primary, secondary or tertiary diffraction grating is formed in the layer 3 by a 2 luminous flux interference exposure method, and the period of the grating is so selected as to feed back a light generated in the injector 14. A p-type AlInP impurity supply layer 4, a current block layer 5, a cap layer 6 are superposed on the grating to complete the distributed reflector 15. With this configuration, the layer 3 is not exposed at the end of the injector 14 at the time of forming the reflector 15, and a laser which is scarcely deteriorated due to oxidation and has high reliability is obtained. |
