Workpiece, in particular semiconductor component, having fine patterns and lithographic method of patterning

摘要

The object is to use a particularly etch-resistant positive-working resist material in the lithography in order to be able to produce submicrometer patterns and to increase the dimensional accuracy and the yield. After irradiation and prior to liquid development, the resist film is treated with a solvent of low activity. As a result, the irradiated areas are selectively rendered soft and they can be developed without noticeable impairment of the unirradiated areas.