RESIST CONTAINING SILICON

摘要

A resist material characterised in that it is capable of forming a negative image by application of radiation, the said material comprising a silyl-containing styrene copolymer and the average molecular weight of the said copolymer being at least 2000 is disclosed. A lithographic process for preparing a pattern resist on a suitable substrate characterised in that it comprises: 1) applying a layer of resist material onto a substrate, the said polymer being selected from alkylsilyl-containing styrene copolymers with halogenated methylstyrene; 2) irradiating the said resist copolymer layer to form a negative pattern image therein; and 3) developing the said image by: i) dissolving away unexposed polymer with a suitable developer solvent; and ii) rinsing the said wet developed resist with suitable solvent to maintain well-defined developed resist pattern image; and 4) etching the resist material in a suitable plasma; is also disclosed. Negative resist compositions and semiconductor wafers are further disclosed. The present resists have reduced resist erosion and improved plasma resiliency.