| 摘要 |
PURPOSE:To obtain a transistor which is made of a normal semiconductor material and has no troubles due to short channeling and is superhigh-speed and small in its consumption power, by using an insulator layer with a localization center to form a current channel between a source electrode and a drain electrode and besides by forming a gate electrode close to the localization center. CONSTITUTION:This transistor is composed of the following parts: an insulator layer 11 which has a localization center 11A to localize carriers on its surface or in its inner part, a source electrode 12 and a drain electrode 13 which are formed to face the insulator layer 11 in order to make the layer 11 serve as a current channel and essentially insulated from the layer, and a gate electrode 15 which is formed close to said localization center 11A and essentially insulated from said insulator layer 11, said source electrode 12, and said drain electrode 13. For example, an insulator layer 23 made of (In0.53Al0.47As)1-x (In0.52Al0.48As)x is formed on a semi-insulating InP substrate 21 through an In0.52Al0.48As buffer layer 22, and Ar ions are implanted into the insulating layer 23 to form a localization center 23A. Subsequently, a source electrode layer 24, a drain electrode layer 25, and the like are formed of n-type In0.53Al0.47As.
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