发明名称 |
PRODUCTION OF SUPERHIGH DENSITY MEMORY |
摘要 |
PURPOSE:To improve recording density by forming the superminute recess and projection parts on the surface of a substrate to be processed with a process where a conductive probe is set extremely close to the surface of the substrate in a reaction gas atmosphere or substrate formed with electron beam sensitive material and a tunnel current is supplied between said substrate and probe in a reaction gas atmosphere. CONSTITUTION:A conductive probe 5 is set extremely close to the surface of a substrate 2 or substrate 2 formed with electron beam sensitive material set in a reaction gas atmosphere. Then a tunnel current is supplied between the substrate 2 and the probe 5. The projection or recess parts are formed on the surface of the substrate 2 where the tunnel current passed through. Then the binarized signals are produced by the presence or absence of the recess or projection part. Thus a recording medium is obtained. Then the information high in density can be recorded. |
申请公布号 |
JPS63271743(A) |
申请公布日期 |
1988.11.09 |
申请号 |
JP19870104239 |
申请日期 |
1987.04.30 |
申请人 |
HITACHI LTD |
发明人 |
TSUJII KANJI;HOSOKI SHIGEYUKI;NISHIMATSU SHIGERU;SUZUKI KEIZO;YAJIMA YUSUKE |
分类号 |
G11B9/00;G11B9/14;G11B11/03 |
主分类号 |
G11B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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