发明名称 PRODUCTION OF SUPERHIGH DENSITY MEMORY
摘要 PURPOSE:To improve recording density by forming the superminute recess and projection parts on the surface of a substrate to be processed with a process where a conductive probe is set extremely close to the surface of the substrate in a reaction gas atmosphere or substrate formed with electron beam sensitive material and a tunnel current is supplied between said substrate and probe in a reaction gas atmosphere. CONSTITUTION:A conductive probe 5 is set extremely close to the surface of a substrate 2 or substrate 2 formed with electron beam sensitive material set in a reaction gas atmosphere. Then a tunnel current is supplied between the substrate 2 and the probe 5. The projection or recess parts are formed on the surface of the substrate 2 where the tunnel current passed through. Then the binarized signals are produced by the presence or absence of the recess or projection part. Thus a recording medium is obtained. Then the information high in density can be recorded.
申请公布号 JPS63271743(A) 申请公布日期 1988.11.09
申请号 JP19870104239 申请日期 1987.04.30
申请人 HITACHI LTD 发明人 TSUJII KANJI;HOSOKI SHIGEYUKI;NISHIMATSU SHIGERU;SUZUKI KEIZO;YAJIMA YUSUKE
分类号 G11B9/00;G11B9/14;G11B11/03 主分类号 G11B9/00
代理机构 代理人
主权项
地址