| 摘要 |
PURPOSE:To contrive the improvement of corrosion resistance of a semiconductor device by a method wherein, after a pellet is fixed on a lead frame and is bonded, thin films having a passivation property are formed. CONSTITUTION:A pellet is fixed on a lead frame and first and second passivation films 2 and 6, such as an Si nitride film, an Si oxide film, a tantalum oxide film and an Al oxide film, are formed by sputtering together with the lead frame in a state that the pellet is bonded. At this time, a masking is performed on at least parts, which are used as outer leads, to contrive to prevent the films 2 and 6 from depositing. Accordingly, the wiring metal (Al) exposed part of a bonding pad part 3 can be covered with the films 2 and 6. Thereby, the corrosion resistance of a device is improved and its reliability is increased.
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