| 摘要 |
PURPOSE:To improve photoconductivity, by passing current through an amorphous silicon thin film in the midway of growing the film on a substrate. CONSTITUTION:After a reaction chamber 1 is evacuated to a high degree of vacuum by means of a vacuum pump, a valve 9 is opened to supply SiH4 or a mixed gas of SiH4 and hydrogen as a diluent gas or an impurity-loading gas. An AC or DC voltage is applied to an electrode 4 from a power source 10 to cause a glow discharge in order to deocmpose the SiH4 or impurity-loading gas, thereby to grow an amorphous silicon film not containing or containing an impurity on the surface of a sample substrate 3. In the midway of growth of the amorphous silicon film, the film is supplied with an AC or DC bias current from a power source 11, thereby to perevent any hydrogen coupling or fluorine coupling of higher order from taking place in the film. |
