| 摘要 |
PURPOSE:To improve the diffraction efficiency by forming a semiconductor layer on a substrate by epitaxial growth while irradiating a laser two-beam interference light on the surface of the substrate. CONSTITUTION:While irradiating two interference beams of laser light on the surface of a substrate, a normal epitaxial growth is performed, for example, a crystal growth by an organic metal vapor technique. When the two interference beams of laser is irradiated, the laser beams are irradiated alternately in cycles on the substrate and the laser beams permit the epitaxial layer where regions having different compositions, conductivity types, and carrier concentrations are formed alternately in cycles to grow. In this way, as the regions having the different compositions, conductivity types, and carrier concentrations are formed under the action of the light, an interface between laser irradiation and irradiationless parts is so steep that its diffraction efficiency becomes higher than conventional ones. |
