发明名称 SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 PURPOSE:To decrease a substrate's occupation area required for one element so as to reduce its manufacturing cost, by interposing a buried electrode between an active layer and an optical waveguide layer and making an active current and a resonance frequency controlling current, which performs variable control of the resonance frequency by changing a refractive index of the optical waveguide layer on a diffraction grating, independently flow toward the buried electrode. CONSTITUTION:This device is composed of the following parts: a first electrode 1, a diffraction grating 2 which is formed on the first electrode 1 through a semiconductor substrate 7, an optical waveguide layer 3 which is formed on the diffraction grating 2, a buried electrode 4 which is formed on the optical waveguide layer 3 and made of a light transmissive material, an active layer 5 which is formed on the buried electrode 4, and a second electrode 6 which is formed on the active layer 5 through a semiconductor layer 8. An active current, which flows across the active layer 5 from the second electrode 6 to the buried electrode 4, is used to emit light from the active layer 5. A resonance frequency controlling current, which flows across the optical waveguide layer 3 formed on the diffraction grating 2 and flows from the first electrode 1 to the buried electrode 4, is used to change a refractive index of the optical waveguide layer 3 and perform variable control of the resonance frequency.
申请公布号 JPS63272088(A) 申请公布日期 1988.11.09
申请号 JP19870104547 申请日期 1987.04.30
申请人 FUJITSU LTD 发明人 KOTAKI YUJI
分类号 H01S5/00;H01S5/042;H01S5/06;H01S5/062;H01S5/12;H01S5/223 主分类号 H01S5/00
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